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Upcoming Events
- ACS Fall
Aug 22-26, Boston, Massachusetts, USA - 3rd EuCheMS Chemistry Congress
Aug 29-Sep 02, Nuremberg, Germany - 4th International SAXS/GISAXS Workshop (PDF)
Sep 09-11, Leoben, Austria - Navigated Atomic Force Microscopy - N8 NEOS
Sep 15, Free Webinar - 17th Bruker Users‘ Group Meetings 2010 - Single Crystal X-ray Diffraction (PDF)
Sep 20-22, Karlsruhe, Germany
Semiconductors
Intrinsic, SiGe and compound semiconductors are the all-important building blocks of the modern world of electronics and communication. Scientists and engineers design materials with new characteristics, develop new production processes and ensure the quality of the products. X-ray methods provide a non-destructive way to obtain a large set of physical parameters of the semiconductor materials. With a wavelength that matches the crystalline lattice spacings involved, X-rays are the natural probe for any type semiconductor sample. Absolute analysis results without calibration are possible, in contrast to traditional methods that use wavelengths of the order of a micrometer.
The hot topic for all semiconductor applications is the examination of the samples, even on large 300 mm wafers, with about 50 µm spatial resolution, either for R&D as well as under routine production control conditions. Bruker AXS offers tailor-made solutions to fit your experimental needs:


